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New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
Document Number: 89009
Revision: 19-May-08
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PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.0.1
0.3
0.5
0.7
8
Instantaneous Forward Voltage (V)
Instantaneo
u
s For
w
ard C
u
rrent (A)
TJ
= 150 °C
TJ
= 125 °C
TJ
= 25 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 6050 90 100
80
70
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse C
u
rrent (mA)
TJ
= 25 °C
TJ
= 125 °C
TJ
= 150 °C
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
J
u
nction Capaci
tance (pF)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
0.1
1
10
100
0.01 0.1 1 10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/
W
)
M(I)3060C
Junction to Case
0.1
1
10
100
0.01 0.1 101 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/
W
)
MF3060C
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